We investigated the formation process, oricntation of grains and surface morphology of CeO₂ films on Al₂O₃ substrates, and YBCO films on CeO₂/Al₂O₃ substrates. CeO₂ films were prepared by electron beam deposition and MOCVD methods. It was found from X-ray analysis that orientation of grains of CeO₂ films was affected by substrate temperature, Ts, and deposition rate, Rd. (100) plane oriented films were prepared as following conditions, Ts-650°C, Td-4A/s, YBCO films on CeO2/Al2O3 substrates were prepared by MOCVD. It was found from X-ray pole figure measurement that the configuration of the crystal axes of YBCO, CeO₂ and Al₂O₃ was as follows; YBCO<110>//CeO₂<100>//Al₂O₃<-110>. Surface morphology of CeO₂ and YBCO films was observcd by Atomic Force Microscope (AFM). It was found that CeO₂ films were smooth surface containing of small projection, andYBCO films were columnar structure which size was about 0.5μm. Tc of these films were about 80K.