Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

Shoichi SHIBA; Masaru SATO; Hiroshi MATSUMURA; Yoichi KAWANO; Tsuyoshi TAKAHASHI; Toshihide SUZUKI; Yasuhiro NAKASHA; Taisuke IWAI; Naoki HARA

doi:10.1587/transele.E98.C.1112

Special Section on Terahertz Waves Coming to the Real World

Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis

Shoichi SHIBA, Masaru SATO, Hiroshi MATSUMURA, Yoichi KAWANO, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Yasuhiro NAKASHA, Taisuke IWAI, Naoki HARA

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Keywords: millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis

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2015 Volume E98.C Issue 12 Pages 1112-1119

DOI https://doi.org/10.1587/transele.E98.C.1112

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Abstract

A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.

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