Complementary Inverters Based on Soluble P- and N-Channel Organic Semiconductors

Masayuki CHIKAMATSU; Yoshinori HORII; Ming LU; Yuji YOSHIDA; Reiko AZUMI; Kiyoshi YASE

doi:10.1587/transele.E94.C.1845

Special Section on Recent Progress in Organoelectronic Materials and Their Applications for Nanotechnology

Complementary Inverters Based on Soluble P- and N-Channel Organic Semiconductors

Masayuki CHIKAMATSU, Yoshinori HORII, Ming LU, Yuji YOSHIDA, Reiko AZUMI, Kiyoshi YASE

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Keywords: organic thin-film transistor, soluble organic semiconductor, complementary inverter, oligothiophene derivative, fullerene derivative

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2011 Volume E94.C Issue 12 Pages 1845-1847

DOI https://doi.org/10.1587/transele.E94.C.1845

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Abstract

We fabricated solution-processed organic complementary inverters based on α, ω-bis (2-hexyldecyl)sexithiophene (BHD6T) for p-channel and C60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12) for n-channel. The BHD6T and C60MC12 thin-film transistors showed high field-effect mobilities of 0.035 and 0.057cm²/Vs, respectively. The complementary inverter with a supply voltage of 50V exhibited inverting voltages of 26.8V for forward and 27.0V for backward sweeps and a high gain of 76.

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