Journal of The Surface Finishing Society of Japan
Online ISSN : 1884-3409
Print ISSN : 0915-1869
ISSN-L : 0915-1869
Reviews
Etching of High Dielectric Constant HfO2 Thin Films in Inductively Coupled Fluorocarbon Plasmas
Kazuo TAKAHASHI, Kouichi ONO, Yuichi SETSUHARA
Author information
Keywords: High-k, Gate Insulating Material, HfO2, Fluorocarbon, Plasma Etching
JOURNAL FREE ACCESS

2004 Volume 55 Issue 12 Pages 793

Details
Download PDF (656K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Article 1st page
Content from these authors
© 2004 by The Surface Finishing Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Predecessor

Journal of the Metal Finishing Society of Japan

Genba Panfuretto

Jitsumu Hyomen Gijutsu

Share this page
feedback
 Top