MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Fabrication of Shallow Silicon Nanoholes and Fixing Nanoparticles
Hisashi FujiiYoshihito KamimotoYoshiyuki FukazawaTetsuya OkudaKen Yoshioka
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2001 Volume 42 Issue 8 Pages 1613-1615

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Abstract
Shallow nanohole structures of uniform size were fabricated on p-type Si by anodizing Si at high applied voltages in a dilute HF solution. The dependence of surface morphology on anodization conditions was investigated and it was found that both HF concentration and ethanol concentration in the electrolyte influenced nanostructures. Nanohole sizes were changed 70–140 nm with increasing applied voltage. Fabricated nanohole structures were used as a substrate for fixing nanoparticles. Nanoparticles, whose sizes were comparable to nanohole sizes, were selectively trapped in nanoholes.
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© 2001 The Japan Institute of Metals and Materials
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