The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
Use of Insulated Gate Bipolar Transistors in an All Solid State Exciter for Multikilowatt Average-power, TEA CO2 Lasers
Hidekazu HATANAKAKatsumi MIDORIKAWATsutomu TAKAHASHIYuichiro TERASHIShyouji ISHIZAKAMinoru OBARAHideo TASHIRO
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1993 Volume 21 Issue 6 Pages 649-660

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Abstract
Using insulated gate bipolar transistors (IGBT), we constructed an efficient, all solid state exciter for high efficiency, high power operation of a transversely excited atmospheric (TEA) CO2 laser. The exciter was composed of a high-voltage pulse generator and a two-stage magnetic pulse compressor. Forty-eight series and two parallel IGBTs were used as the main switch of the pulse generator. The maximum switching voltage as high as 36 kV was achieved with a transfer energy of about 100J. The pulse generator, employing an LC inversion circuit, produced a 65 kV, 7.5μs pulse, which was compressed to 0.5μs by the pulse compressor. The use of an IGBT stack decreased energy waste in a snubber circuit, resulting in a high efficiency of more than 90%. By applying the exciter to a TEA CO2 laser with a discharge volume of 0.5l, an average laser power of 4.6 kW was attained at a repetition rate of 550 pps for a switching energy of 78J. The overall efficiency of the laser was as high as 10.5%. A repetition rate of 1.1 kpps was attained, resulting in an average laser power of 3.4 kW by reducing the switching energy to 42J.
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