An n-type thermoelectric film of Bi₂Te_2.7Se_0.3 was fabricated by radio frequency sputtering. The target for the sputtering was prepared by mechanical alloying (MA) and pulsed current sintering (PCS) process. The single phase of Bi₂Te₃ including Se was obtained by a planetary ball milling of elementary Bi powder, Te powder and Se powder for 18 ks. The obtained MA powder was consolidated by PCS into cylindrical target of 50 mm in diameter and 4 mm thickness at 643 K under a pressure of 13 MPa. The sintered Bi₂Te_2.7Se_0.3 was joined to Cu backing plate with In for an insertion by PCS process.
The thin film of Bi₂Te_2.7Se_0.3 was fabricated on a polyimide substrate by RF sputtering. This film was amorphous state and crystallized at about 623 K. The performance of the thermoelectric module with 5 thermoelectric film devices was 56 mV in voltage and 0.07 mA in current at 20 K of the difference between heating side temperature and cooling side temperature.