Indium oxide films were reactively deposited at oxygen pressures of 3x10^-3-0.3Pa and at substrate temperatures of 25-200°C. The influence of the oxygen pressure on the electrical resistivity of films and the light transmission was investigated. At a substrate temperature of 25°C, the resistivity of the films was drastically increased with increasing oxygen pressure, while at 100°C, the behavior of the film resistivity was rather complicated. At 150 and 200°C, the resistivity of films was gradually increased as the oxygen pressure increased. The light transmission of films was increased with increasing oxygen pressure at 25-200°C. The dependence of the film resistivity and transmission on the oxygen pressure was discussed based on the structure of films.