Solid-phase synthesis of Mg2Si thin film on sapphire substrate

Motomu Saijo; Kazuhiro Kunitake; Ryota Sasajima; Yuta Takagi; Naoyuki Sato; Takashi Ikehata

doi:10.56646/jjapcp.5.0_011302

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011302

DOI https://doi.org/10.56646/jjapcp.5.0_011302

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Thermoelectric materials

Solid-phase synthesis of Mg₂Si thin film on sapphire substrate

Motomu Saijo, Kazuhiro Kunitake, Ryota Sasajima, Yuta Takagi, Naoyuki Sato, Takashi Ikehata

Author information

CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Magnesium silicide (Mg₂Si) is expected as a semiconductor material for thermoelectric devices though synthesis of the thin film has been difficult due to difference in thermodynamic properties of Mg and Si. The authors have succeeded in preparing a poly-crystalline Mg₂Si thin film with a thickness of ~1 µm and strong (111) orientation on a sapphire substrate (r plane). The method includes sputter deposition of a Mg/Si bilayer from independent Mg and Si sources and post-annealing (2 h) in argon gas at 900 Pa. The optimum annealing temperature for the Mg₂Si film synthesis is found to be 300–400 °C.

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