Growth of p-type β-FeSi2 polycrystalline films by RF magnetron sputtering

Shuya Ikeda; Kazuya Ogi; Tetsu Hattori; Takahiko Higashi; Yoshikazu Terai

doi:10.56646/jjapcp.5.0_011204

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011204

DOI https://doi.org/10.56646/jjapcp.5.0_011204

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Photovltaic materials

Growth of p-type β-FeSi₂ polycrystalline films by RF magnetron sputtering

Shuya Ikeda, Kazuya Ogi, Tetsu Hattori, Takahiko Higashi, Yoshikazu Terai

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

β-FeSi₂ polycrystalline films with p-type conduction were grown by RF magnetron sputtering using a B-doped p⁺-Si target with Fe chips. The hole density and mobility were 2 × 10¹⁷ cm⁻³ and 71 cm² V⁻¹ s⁻¹ at RT, respectively. The acceptor levels formed by the B-doping were obtained to be 10 and 245 meV. In the temperature dependence of electrical properties, the p-type β-FeSi₂ film showed the impurity-band conduction at 77–350 K.

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