Dependence of direct transition energy on growth temperature in β-FeSi2 epitaxial films

Motoki Iinuma; Hiroaki Tsukamoto; Naoki Murakoso; Haruki Yamaguchi; Yoshikazu Terai

doi:10.56646/jjapcp.5.0_011106

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011106

DOI https://doi.org/10.56646/jjapcp.5.0_011106

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Light emission and detection materials

Dependence of direct transition energy on growth temperature in β-FeSi₂ epitaxial films

Motoki Iinuma, Hiroaki Tsukamoto, Naoki Murakoso, Haruki Yamaguchi, Yoshikazu Terai

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CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

Direct transition energy (E_g) of β-FeSi₂/Si(111) epitaxial films grown at different growth temperatures (T_s) was investigated by photoreflectance (PR) measurements. In Raman spectra, the wavenumber of A_g-mode in Fe–Fe and Si–Si vibrations shifted to higher wavenumber with decrease of T_s. The estimated Si/Fe composition ratio of the epitaxial layer became small (Si-poor) in the films grown at lower T_s. In PR spectra, E_g shifted to higher energy with decrease of T_s. These results show that the modification of electronic structure by a strain induced at β-FeSi₂/Si hetero-interface is suppressed by an increase of Si vacancies in β-FeSi₂.

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