Using a new substrate produced by depositing a self-epitaxial CeO₂ cap layer with a pulsed laser deposition (PLD) method on a Gd₂Zr₂O₇ (GZO) buffered Hastelloy tape, which was applied using the ion-beam assisted deposition (IBAD) method, YBa₂Cu₃O_7-δ (YBCO) layers by the PLD method were studied in terms of the delta phi (Δφ), Ra values, amount of existing a-axis oriented crystals, and the critical current, I_c, values of the YBCO coated conductors. To obtain a YBCO coated conductor with high I_c, good in-plane texturing of the CeO₂ layer is required. The values of I_c were saturated at a certain critical YBCO thickness, which is thicker with a better Δφ of the CeO₂ layer. As the YBCO layer thickness increased, the surface morphology became much rougher. Consequently the surface temperature of the YBCO layer fell and the amount of a-axis oriented crystals in the YBCO increased. To solve this problem, we fabricated YBCO films by multi-layer deposition using the Reel-to-Reel system, which was carried out at different temperatures settings and thus the values of I_c increased.