Aiming at the low temperature fabrication process for polycrystalline silicon films, we employed L-coupled plasma CVD method with and without mesh electrode.
Silane diluted with hydrogen, as a gas source, was introduced into a quartz tube and decomposed by rf power inductively applied. Polycrystalline silicon films were formed on the substrates such as glass and quartz.
The strong preferred orientations in the films were observed at the substrate temperature of above 550°C. Small amount of boron not only increased the crystal growth, but also was effective for reducing the growth temperature.
A pressure sensor using the polycrystalline silicon films doped with boron was fabricated and estimated in the application points of view.