半導体プロセスへの自己組織化リソグラフィ応用

清野 由里子; 加藤 寛和; 米満 広樹; 佐藤 寛暢; 菅野 正洋; 小林 克稔; 川西 絢子; 東 司

doi:10.1541/ieejfms.133.532

Special Issue Paper

Application of Directed Self-Assembly Lithography to Semiconductor Device Manufacturing Process

Yuriko Seino, Hirokazu Kato, Hiroki Yonemitsu, Hironobu Sato, Masahiro Kanno, Katsutoshi Kobayashi, Ayako Kawanishi, Tsukasa Azuma

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Keywords: directed self assembly, graphoepitaxy, block copolymer, PS-b-PMMA, contact hole shrink, wet development

JOURNAL FREE ACCESS

2013 Volume 133 Issue 10 Pages 532-536

DOI https://doi.org/10.1541/ieejfms.133.532

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Abstract

Directed self-assembly (DSA) lithography are recently getting in the spotlight as one of the most promising new generation lithography (NGL) candidates, which have a potential to fabricate semiconductor device patterns down to sub-30nm. In this report, latest experimental and simulation results of contact hole shrink process using the DSA are demonstrated.

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