IEEJ Transactions on Fundamentals and Materials
Online ISSN : 1347-5533
Print ISSN : 0385-4205
ISSN-L : 0385-4205
Paper
Preparation of the Carbon Nitride Thin Films using NH3 Ambient Gas by Pulsed Laser Process
Shin-ichi AoquiTamiko OhshimaTomoaki IkegamiKenji Ebihara
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2002 Volume 122 Issue 4 Pages 398-403

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Abstract
Amorphous carbon nitride (CNx) thin films are recognized to have potential for applications like hard coating and electron field emission device. In this paper we have optically studied the dynamics of the plasma plume during preparation of CNx thin films by KrF excimer laser (λ=248 nm) ablation of pure graphite target in a pure NH3 gas. It was found that carbon atoms emitted from the target react with ambient gas. CN and N2 molecules are formed in the gas phase. We have prepared the CNx thin films at various NH3 gas pressure and laser fluence on Si (100) and quartz substrates. The N/C ratios of the CNx films depended on the ambient NH3 gas pressure and laser fluence. We obtained the maximum N/C ratio of 0.62 at NH3 pressure of 100 mTorr. The typical absorption of CN bonds such as sp2 C-N, sp3 C-N, G band and D band were detected from the infrared absorption measurement by FTIR for the deposited CNx thin films.
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© 2002 by the Institute of Electrical Engineers of Japan
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