マルチエピ法及びトレンチ埋め戻しエピ法で作製した1.2 kV耐圧SiC SJ-MOSFETの性能比較

染谷 満; 大薗 国栄; 紀 世陽; 俵 武志; 森本 忠雄; 加藤 智久; 児島 一聡; 原田 信介

doi:10.1541/ieejeiss.144.257

Comparison of 1.2 kV SiC Superjunction MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

Mitsuru Sometani, Kunihide Oozono, Shiyang Ji, Takeshi Tawara, Tadao Morimoto, Tomohisa Kato, Kazutoshi Kojima, Shinsuke Harada

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Keywords: SiC, SJ-MOSFET, trench-filling epitaxial growth, static and dynamic characteristics

JOURNAL RESTRICTED ACCESS

2024 Volume 144 Issue 3 Pages 257-262

DOI https://doi.org/10.1541/ieejeiss.144.257

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Abstract

We compared static and dynamic characteristics of a 1.2 kV-Class SJ-MOSFET fabricated by the multi-epitaxial growth (ME) method and the trench-filling epitaxial growth (TFE) method, which is expected to have a lower process cost. Comparably low specific on-resistance and switching losses were observed for the SJ-MOSFETs fabricated by both methods.

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