It is reported for the first time that hot-carrier-induced degradation occurs in a SiGe/Si heterostructure introduced into the channel region of SiGe/Si-hetero-MOSFETs, using a newly established elaborate low-temperature charge pumping (LTCP) technique. Moreover, the hetero-interface trap density generated and the width of the degraded region are estimated from the LTCP characteristics. These results will enable new levels of improvement to the performance and reliability of strained-Si and SiGe devices.